| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | WDFN-6 |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.019 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2.4 W |
| Drain to Source Voltage (Vds) | 20 V |
| Continuous Drain Current (Ids) | 7.8A |
| Rise Time | 14 ns |
| Input Capacitance (Ciss) | 2015pF @10V(Vds) |
| Input Power (Max) | 900 mW |
| Fall Time | 96 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.4W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDMA507PZ is a single P-channel MOSFET produced Fairchild Semiconductor"s PowerTrench® process. It is designed specifically for battery charge or load switching in cellular handset and other ultra-portable applications. It features a MOSFET with low ON-state resistance. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
● Halogen-free
● >3.2kV Typical HBM ESD protection level
Fairchild
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