| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Number of Channels | 1 Channel |
| Polarity | N-CH |
| Power Dissipation | 62 W |
| Drain to Source Voltage (Vds) | 500 V |
| Continuous Drain Current (Ids) | 4A |
| Rise Time | 22 ns |
| Input Capacitance (Ciss) | 440pF @25V(Vds) |
| Input Power (Max) | 62 W |
| Fall Time | 21 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 62W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●UniFET™ II MOSFET is Fairchild Semiconductor®’s high voltage MOSFET family based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest on-state resistance among the planar MOSFET, and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
●Features
●• RDS(on) = 1.38 (Typ.) @ VGS = 10 V, ID = 2 A
●• Low Gate Charge (Typ. 9 nC)
●• Low Crss (Typ. 4 pF)
●• 100% Avalanche Tested
●• Improved dv/dt Capability
●• ESD Imoroved Capability
●• RoHS Compliant
●Applications
●• LCD/LED/PDP TV
●• Lighting
●• Uninterruptible Power Supply
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