TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Voltage Rating (DC) | -150 V |
Current Rating | -3.00 A |
Case/Package | PowerWDFN-8 |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 1.5 Ω |
Polarity | P-Channel |
Power Dissipation | 42 W |
Threshold Voltage | 3.8 V |
Input Capacitance | 270 pF |
Gate Charge | 9.00 nC |
Drain to Source Voltage (Vds) | 150 V |
Breakdown Voltage (Gate to Source) | ±30.0 V |
Continuous Drain Current (Ids) | 3.00 A |
Rise Time | 11 ns |
Input Capacitance (Ciss) | 270pF @25V(Vds) |
Input Power (Max) | 42 W |
Fall Time | 13 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 42W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 3 mm |
Size-Width | 3 mm |
Size-Height | 0.95 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDMC2523P is a QFET® P-channel enhancement-mode Power MOSFET produced using Fairchild"s proprietary planar stripe DMOS technology. This advanced technology has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulse in the avalanche and commutation mode. It is well suited for low voltage applications such as audio amplifier and high efficiency switching DC-to-DC converters.
● Fast switching
● Improved dV/dt capability
● 6.2nC Typical low gate charge
● 10pF Typical low Crss
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