IXFB60N80P Datasheet PDF - IXYS Semiconductor

Manufacturer:	IXYS Semiconductor
Category:	MOSFETs
Case Package:	TO-264-3
Description:	Trans MOSFET N-CH 800V 60A 3Pin(3+Tab) PLUS 264
Documentation:	IXFB60N80P Datasheet (4 Pages)
Pictures:	3D Model Symbol Footprint Pinout Product Pictures

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IXFB60N80P Specifications

TYPE	DESCRIPTION
Mounting Style	Through Hole
Number of Pins	3 Pin
Case/Package	TO-264-3
Number of Channels	1 Channel
Drain to Source Resistance (on) (Rds)	140 mΩ
Power Dissipation	1.25 kW
Threshold Voltage	5 V
Drain to Source Voltage (Vds)	800 V
Breakdown Voltage (Drain to Source)	800 V
Rise Time	29 ns
Input Capacitance (Ciss)	18000pF @25V(Vds)
Input Power (Max)	1250 W
Fall Time	26 ns
Operating Temperature (Max)	150 ℃
Operating Temperature (Min)	-55 ℃
Power Dissipation (Max)	1250W (Tc)