| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | Power-33-8 |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0086 Ω |
| Polarity | P-Channel |
| Power Dissipation | 41 W |
| Threshold Voltage | 1.8 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Continuous Drain Current (Ids) | 11.5A |
| Rise Time | 14 ns |
| Input Capacitance (Ciss) | 3970pF @15V(Vds) |
| Input Power (Max) | 2.3 W |
| Fall Time | 46 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.3W (Ta), 41W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 3.3 mm |
| Size-Width | 3.3 mm |
| Size-Height | 0.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDMC6679AZ is a P-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) and ESD protection. It is suitable for load switch and battery pack applications.
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● 8kV Typical HBM ESD protection level
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