| TYPE | DESCRIPTION |
|---|
| Number of Pins | 8 Pin |
| Case/Package | Power-33 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0124 Ω |
| Power Dissipation | 18 W |
| Threshold Voltage | 1.9 V |
| Drain to Source Voltage (Vds) | 30 V |
| Rise Time | 3 ns |
| Input Capacitance (Ciss) | 710pF @15V(Vds) |
| Input Power (Max) | 2.3 W |
| Fall Time | 2 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2300 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Operating Temperature | -55℃ ~ 150℃ |
The FDMC8882 is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. It is well suited for load switching applications common in portable battery packs.
● High performance technology for extremely low RDS (ON)
ON Semiconductor
0.48 MByte
ON Semiconductor
4 Pages / 0.17 MByte
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