| TYPE | DESCRIPTION |
|---|
| Frequency | 200MHz ~ 22GHz |
| Number of Pins | 32 Pin |
| Case/Package | LFQFN-32 |
| Supply Current | 350 mA |
| Power Dissipation | 5400 mW |
| Gain | 14 dB |
| Test Frequency | 18GHz ~ 22GHz |
| Operating Temperature (Max) | 85 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| Power Dissipation (Max) | 5400 mW |
| Supply Voltage | 10 V |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Pre-Release |
| Packaging | Tape & Reel (TR) |
Product Details
●The HMC907APM5E is a GaAs MMIC pHEMT Distributed Power Amplifier which operates between 0.2 and 22 GHz. This self-biased power amplifier provides 14 dB of gain, +40 dBm output IP3 and +28 dBm of output power at 1 dB gain compression while requiring only 350 mA from a +10 V supply. Gain flatness is excellent at ±0.7 dB from 0.2 to 22 GHz making the HMC907APM5E ideal for EW, ECM, Radar and test equipment applications. The HMC907APM5E amplifier I/Os are internally matched to 50 Ohms facilitating integration into Mutli-Chip-Modules (MCMs) and is packaged in a leadless QFN 5x5 mm surface mount package, and requires no external matching components.
●Applications
● Test instrumentation
● Military & space
●### Features and Benefits
● High P1dB output power: +28 dBm
● High gain: 14 dB
● High output IP3: +40 dBm
● Single supply: +10 V @ 350 mA
● 50 ohm matched input/output
● 32 lead 5x5 mm SMT package: 25 mm2
ADI
RF Amp Single Power Amp 22GHz 11V 32Pin LFCSP EP T/R
ADI
RF Amp Single Power Amp 22GHz 11V 32Pin LFCSP EP T/R
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GaAs pHEMT MMIC Power Amplifier 0.2 - 22GHz
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