| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 6 Pin |
| Case/Package | MicroFET-6 |
| Number of Channels | 2 Channel |
| Number of Positions | 6 Position |
| Drain to Source Resistance (on) (Rds) | 0.055 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 1.4 W |
| Threshold Voltage | 700 mV |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20 V |
| Continuous Drain Current (Ids) | 3.8A |
| Rise Time | 2 ns |
| Input Capacitance (Ciss) | 225pF @10V(Vds) |
| Input Power (Max) | 600 mW |
| Fall Time | 1.7 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1400 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 1.6 mm |
| Size-Width | 1.6 mm |
| Size-Height | 0.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDME1024NZT is a dual N-channel PowerTrench® MOSFET designed specifically as a single package solution for dual switching requirement in cellular handset and other ultra-portable applications. It has two independent N-channel MOSFETs with low ON-state resistance for minimum conduction losses. The MicroFET thin package offers exceptional thermal performance for its physical size and is well suited to switching and linear mode applications.
● Low profile
● Halogen-free
● ±8V Gate to source voltage
● 3.8A Continuous drain current
● 6A Pulsed drain current
Fairchild
7 Pages / 0.33 MByte
Fairchild
9 Pages / 0.33 MByte
Fairchild
4 Pages / 0.17 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FDME1024NZT Dual MOSFET, Dual N Channel, 3.8A, 20V, 0.055Ω, 4.5V, 700mV
ON Semiconductor
Trans MOSFET N-CH 20V 3.8A 6-Pin MicroFET T/R
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