| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | Power-56 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0052 Ω |
| Polarity | P-Channel |
| Power Dissipation | 73 W |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 15.2A |
| Rise Time | 28 ns |
| Input Capacitance (Ciss) | 5915pF @15V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 79 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta), 73W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 6 mm |
| Size-Height | 1.05 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDMS6673BZ is a P-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) and ESD protection. It is suitable for load switch and battery pack applications.
● MSL1 robust package design
● 8kV Typical HBM ESD protection level
Fairchild
9 Pages / 0.52 MByte
Fairchild
10 Pages / 0.43 MByte
Fairchild
4 Pages / 0.15 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FDMS6673BZ MOSFET Transistor, P Channel, -28A, -30V, 0.0052Ω, -10V, -1.8V
ON Semiconductor
Trans MOSFET P-CH Si 30V 15.2A 8Pin PQFN EP T/R
Freescale
MOSFET P-CH 30V 15.2A POWER56
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