| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | ISOPLUS-247 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.15 Ω |
| Polarity | N-Channel |
| Power Dissipation | 250 W |
| Threshold Voltage | 4 V |
| Drain to Source Voltage (Vds) | 800 V |
| Continuous Drain Current (Ids) | 25.0 A |
| Rise Time | 15 ns |
| Isolation Voltage | 2.50 kV |
| Fall Time | 6 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -40 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Operating Temperature | -40℃ ~ 150℃ (TJ) |
The IXKR25N80C is a CoolMOS™ N-channel enhancement-mode Power MOSFET features avalanche rated for unclamped inductive switching (UIS) and low ON-resistance.
● ISOPLUS247™ package with DCB base
● Electrical isolation towards the heat sink
● Low coupling capacitance to the heat sink for reduced EMI
● High power dissipation
● High temperature cycling capability of chip on DCB
● JEDEC TO-247AD compatible
● Easy clip assembly
● Fast CoolMOS™ power MOSFET 3rd generation
● High blocking capability
● Low thermal resistance due to reduced chip thickness
● Enhanced total power density
● Low RDS (ON)
● High VDSS
IXYS Semiconductor
2 Pages / 0.09 MByte
IXYS Semiconductor
6 Pages / 1.89 MByte
IXYS Semiconductor
IXYS SEMICONDUCTOR IXKR25N80C Power MOSFET, N Channel, 25A, 800V, 150mohm, 10V, 4V
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
