FDMS7670 Datasheet PDF - Fairchild

General Description

●This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.

●Features

●Max rDS(on) = 3.8 mΩ at VGS = 10 V, ID = 21 A

●Max rDS(on) = 5.0 mΩ at VGS = 4.5 V, ID = 17 A

●Advanced Package and Silicon design for low rDS(on) and high efficiency

●Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance withminimum EMI in sync buck converter applications

●MSL1 robust package design

●100% UIL tested

●RoHS Compliant

●Applications

●IMVP Vcore Switching for Notebook

●VRM Vcore Switching for Desktop and Server

●OringFET / Load Switch

●DC-DC Conversion