| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | Power-56 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0024 Ω |
| Polarity | N-Channel |
| Power Dissipation | 65 W |
| Threshold Voltage | 1.6 V |
| Drain to Source Voltage (Vds) | 30 V |
| Continuous Drain Current (Ids) | 22A |
| Rise Time | 6 ns |
| Input Capacitance (Ciss) | 4225pF @15V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 5 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta), 65W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 5 mm |
| Size-Width | 6 mm |
| Size-Height | 1.05 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDMS7670AS is a SyncFET™ N-channel MOSFET produced using PowerTrench® process. It is designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest RDS (ON) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode. It is suitable as synchronous rectifier for DC-to-DC converter.
● Advanced package and silicon combination for low RDS (ON)and high efficiency
● MSL1 Robust package design
● 100% UIL tested
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