| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | Power-56 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.015 Ω |
| Power Dissipation | 104 W |
| Threshold Voltage | 2.5 V |
| Drain to Source Voltage (Vds) | 150 V |
| Rise Time | 7.9 ns |
| Input Capacitance (Ciss) | 2041pF @75V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 5.8 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 104 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 5 mm |
| Size-Width | 6 mm |
| Size-Height | 1.05 mm |
The FDMS86200 is a N-channel MOSFET is produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance.
● Shielded gate MOSFET technology
● Advanced package and silicon combination for low RDS (ON) and high efficiency
● MSL1 Robust package design
● 100% UIL tested
ON Semiconductor
7 Pages / 0.2 MByte
ON Semiconductor
9 Pages / 0.89 MByte
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4 Pages / 0.15 MByte
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