| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -1.50 A |
| Case/Package | SOT-23-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.125 Ω |
| Polarity | P-Channel |
| Power Dissipation | 500 mW |
| Input Capacitance | 341 pF |
| Gate Charge | 3.80 nC |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Gate to Source) | ±12.0 V |
| Continuous Drain Current (Ids) | -1.50 A |
| Rise Time | 10 ns |
| Input Capacitance (Ciss) | 341pF @10V(Vds) |
| Input Power (Max) | 460 mW |
| Fall Time | 10 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.4 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDN308P is a 2.5V specified P-channel MOSFET uses a rugged gate version of Fairchild"s advanced PowerTrench® process. It has been optimized for power management and load switch applications with a wide range of gate drive voltage (2.5 to 12V). The SuperSOT™-3 provides low RDS (ON) and 30% higher power handling capability than SOT23 in the same footprint.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
Fairchild
14 Pages / 0.25 MByte
Fairchild
8 Pages / 0.09 MByte
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1 Pages / 0.04 MByte
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FAIRCHILD SEMICONDUCTOR FDN308P MOSFET Transistor, P Channel, -1.5A, -20V, 125mohm, -4.5V, -1V
ON Semiconductor
Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
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P-Channel 2.5V Specified PowerTrench MOSFET
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