| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Frequency | 90 MHz |
| Number of Pins | 4 Pin |
| Voltage Rating (DC) | 150 V |
| Current Rating | 5.00 A |
| Case/Package | TO-261-4 |
| Number of Positions | 3 Position |
| Polarity | NPN |
| Power Dissipation | 3 W |
| Breakdown Voltage (Collector to Emitter) | 150 V |
| Continuous Collector Current | 5A |
| hFE Min | 100 @1A, 5V |
| hFE Max | 100 |
| Input Power (Max) | 3 W |
| DC Current Gain (hFE) | 200 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 3000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Material | Silicon |
| Size-Length | 6.7 mm |
| Size-Width | 3.7 mm |
| Size-Height | 1.65 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FZT855TA is a NPN medium power Bipolar Transistor offers 5A high continuous collector current IC and 250V collector-base voltage.
● UL94V-0 Flammability rating
● 10A Peak pulse current
● Very low saturation voltage VCE(sat)<110mV @ 1A
● 50mR RCE(sat) for a low equivalent ON-resistance
● hFE specified up to 10A for a high gain hold-up
● FZT955 Complementary PNP type
● Halogen-free, Green device
● -55 to 150°C Operating temperature range
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