| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -1.30 A |
| Case/Package | SOT-23-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 180 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 500 mW |
| Input Capacitance | 150 pF |
| Gate Charge | 1.40 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Gate to Source) | ±25.0 V |
| Continuous Drain Current (Ids) | -1.30 A |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 150pF @15V(Vds) |
| Input Power (Max) | 460 mW |
| Fall Time | 1 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 500mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 2.92 mm |
| Size-Width | 1.4 mm |
| Size-Height | 0.94 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDN352AP is a P-channel Logic Level MOSFET produced using Fairchild Semiconductor advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. This device is well suited for low voltage and battery powered applications where low in-line power loss is needed in a very small outline surface mount package.
● High performance trench technology for extremely low RDS (ON)
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