FDN360 Datasheet PDF - Fairchild

General Description

●This  P-Channel  Logic Level  MOSFET is produced using Fairchild Semiconductor  advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for  low voltage and battery powered applications where low in-line power loss and fast switching are required.

●Features

●·  –2A, –30 V.  RDS(ON)= 80 mW@ VGS= –10 V

●                    RDS(ON)= 125mW@ VGS= –4.5 V

●·  Low gate charge (6.2 nC typical)

●·  High performance trench technologyfor extremely low RDS(ON).

●·  High power version of industry Standard SOT-23 package.Identical pin-out to SOT-23 with 30%

●higher power handling capability.