| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 1.80 A |
| Case/Package | SOT-23-3 |
| Drain to Source Resistance (on) (Rds) | 72.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 500mW (Ta) |
| Input Capacitance | 220 pF |
| Gate Charge | 2.10 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 1.80 A |
| Rise Time | 11.0 ns |
| Input Capacitance (Ciss) | 220pF @15V(Vds) |
| Input Power (Max) | 460 mW |
| Power Dissipation (Max) | 500mW (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
N-Channel, Logic Level, PowerTrench General Description This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor"s PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. • Low gate charge ( 2.1nC typical ). • Fast switching speed. • High performance trench technology for extremely low RDS(on) .• High power version of industry standard SOT-23package. Identical pin out to SOT-23 with 30% higher power handling capability.
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