| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Frequency | 3 MHz |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | -40.0 V |
| Current Rating | 1.40 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Polarity | PNP |
| Power Dissipation | 2 W |
| Breakdown Voltage (Collector to Emitter) | 40 V |
| Continuous Collector Current | 3A |
| hFE Min | 10 @3A, 4V |
| Input Power (Max) | 2 W |
| DC Current Gain (hFE) | 50 |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -65 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Material | Silicon |
| Operating Temperature | -65℃ ~ 150℃ (TJ) |
The versatility of this PNP TIP32G GP BJT from ON Semiconductor makes it capable of being use as either a switch or amplifier in your circuit. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 2000 mW. This product comes in rail packaging to keep individual parts separated and protected. This bipolar junction transistor has an operating temperature range of -65 °C to 150 °C. It has a maximum collector emitter voltage of 40 V and a maximum emitter base voltage of 5 V.
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