| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.53 Ω |
| Polarity | N-Channel |
| Power Dissipation | 240 W |
| Threshold Voltage | 3 V |
| Drain to Source Voltage (Vds) | 600 V |
| Continuous Drain Current (Ids) | 12A |
| Rise Time | 50 ns |
| Input Capacitance (Ciss) | 1676pF @25V(Vds) |
| Input Power (Max) | 240 W |
| Fall Time | 60 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 240W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 16.51 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDP12N60NZ is a N-channel UniFET™ II high voltage MOSFET based on advanced planar stripe and DMOS technology. This advanced MOSFET family has the smallest ON-state resistance among the planar MOSFET and also provides superior switching performance and higher avalanche energy strength. In addition, internal gate-source ESD diode allows UniFET II MOSFET to withstand over 2kV HBM surge stress. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
● Low gate charge (26nC)
● Low Crss (12pF)
● 100% avalanche tested
● Improved dV/dt capability
● ESD improved capability
Fairchild
10 Pages / 0.29 MByte
Fairchild
10 Pages / 0.36 MByte
Fairchild
1 Pages / 0.09 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FDP12N60NZ Power MOSFET, N Channel, 12A, 600V, 0.53Ω, 10V, 3V
ON Semiconductor
N-Channel UniFETTM II MOSFET 600V, 12A, 650mΩ
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