TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Channels | 1 Channel |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.012 Ω |
Polarity | N-Channel |
Power Dissipation | 110 W |
Threshold Voltage | 2.5 V |
Drain to Source Voltage (Vds) | 100 V |
Breakdown Voltage (Drain to Source) | 100 V |
Continuous Drain Current (Ids) | 57A |
Rise Time | 164 ns |
Input Capacitance (Ciss) | 4760pF @25V(Vds) |
Input Power (Max) | 110 W |
Fall Time | 83 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 110W (Tc) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tube |
Size-Length | 10.67 mm |
Size-Width | 4.83 mm |
Size-Height | 16.51 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDP150N10 is a N-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been tailored to minimize the ON-state resistance while maintaining superior switching performance. It is suitable for use in synchronous rectification for ATX/server/telecom PSU, battery protection circuit and uninterruptible power supplies.
● Fast switching speed
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
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