TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 6 Pin |
Case/Package | TSOP-6 |
Number of Positions | 6 Position |
Drain to Source Resistance (on) (Rds) | 33 mΩ |
Polarity | N-Channel |
Power Dissipation | 1.7 W |
Threshold Voltage | 1.2 V |
Drain to Source Voltage (Vds) | 30 V |
Continuous Drain Current (Ids) | 5A |
Rise Time | 13 ns |
Input Capacitance (Ciss) | 325pF @15V(Vds) |
Input Power (Max) | 2.7 W |
Fall Time | 11 ns |
Operating Temperature (Max) | 150 ℃ |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
Minimum Packing Quantity | 3000 |
The SI3456DDV-T1-GE3 is a 30VDS TrenchFET® N-channel enhancement-mode Power MOSFET suitable for load switch, HDD and DC-to-DC converter applications.
● Halogen-free
● -55 to 150°C Operating temperature range
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