TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 3 Pin |
Case/Package | TO-220-3 |
Number of Positions | 3 Position |
Drain to Source Resistance (on) (Rds) | 0.094 Ω |
Power Dissipation | 235 W |
Threshold Voltage | 5 V |
Drain to Source Voltage (Vds) | 250 V |
Rise Time | 230 ns |
Input Capacitance (Ciss) | 1640pF @25V(Vds) |
Input Power (Max) | 235 W |
Fall Time | 120 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 235 W |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Rail, Tube |
Size-Length | 10.67 mm |
Size-Width | 4.83 mm |
Size-Height | 9.4 mm |
Operating Temperature | -55℃ ~ 150℃ |
The FDP33N25 is an UniFET™ N-channel High Voltage MOSFET produced based on Fairchild Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
● 100% Avalanche tested
● 36.8nC Typical low gate charge
● 39pF Typical low Crss
ON Semiconductor
8 Pages / 0.36 MByte
ON Semiconductor
18 Pages / 1.07 MByte
ON Semiconductor
1 Pages / 0.09 MByte
Fairchild
Trans MOSFET N-CH 250V 33A 3Pin(3+Tab) TO-220AB Rail
ON Semiconductor
Trans MOSFET N-CH 250V 33A 3Pin(3+Tab) TO-220AB Rail
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