| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 250 V |
| Current Rating | 33.0 A |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.094 Ω |
| Polarity | N-Channel |
| Power Dissipation | 235 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 2.13 nF |
| Gate Charge | 48.0 nC |
| Drain to Source Voltage (Vds) | 250 V |
| Breakdown Voltage (Drain to Source) | 250 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 33.0 A |
| Rise Time | 230 ns |
| Input Capacitance (Ciss) | 2135pF @25V(Vds) |
| Input Power (Max) | 235 W |
| Fall Time | 120 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 235W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.83 mm |
| Size-Height | 9.4 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDP33N25 is an UniFET™ N-channel High Voltage MOSFET produced based on Fairchild Semiconductor"s planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance, provide better switching performance and higher avalanche energy strength. It is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
● 100% Avalanche tested
● 36.8nC Typical low gate charge
● 39pF Typical low Crss
Fairchild
10 Pages / 1.1 MByte
Fairchild
20 Pages / 2.6 MByte
Fairchild
1 Pages / 0.06 MByte
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1 Pages / 0.14 MByte
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Trans MOSFET N-CH 250V 33A 3Pin(3+Tab) TO-220AB Rail
ON Semiconductor
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