| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Drain to Source Resistance (on) (Rds) | 1.4 Ω |
| Polarity | N-CH |
| Power Dissipation | 85 W |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Continuous Drain Current (Ids) | 5A |
| Rise Time | 22 ns |
| Input Capacitance (Ciss) | 640pF @25V(Vds) |
| Input Power (Max) | 85 W |
| Fall Time | 20 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | 55 ℃ |
| Power Dissipation (Max) | 85W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Length | 10.67 mm |
| Size-Width | 4.7 mm |
| Size-Height | 16.3 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Description
●These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pluse in the avalanche and commutation mode. These devices are well suited for high efficient switched mode powersuppliesand active power factor correction.
●Features
●•RDS(on) = 1.15Ω( Typ.)@ VGS= 10V, ID= 2.5A
●• Low gate charge ( Typ. 11nC)
●• Low Crss ( Typ. 5pF)
●• Fast switching
●• 100% avalanche tested
●• Improved dv/dt capability
●• RoHS compliant
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