| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 45.0 A |
| Case/Package | TO-3-3 |
| Polarity | NPN |
| Power Dissipation | 164000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 55 ns |
| Input Power (Max) | 164 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 164000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Size-Height | 20.82 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The HGTG20N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25°C and 150°C. The IGBT used is development type TA49178. The diode used in anti-parallel with the IGBT is the RHRP3060 (TA49063).
●Features
●• 45A, 600V, TC= 25°C
●• 600V Switching SOA Capability
●• Typical Fall Time. . . . . . . . . . . . . . . . 108ns at TJ= 150°C
●• Short Circuit Rating
●• Low Conduction Loss
●• Hyperfast Anti-Parallel Diode
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