| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Channels | 1 Channel |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.36 Ω |
| Polarity | N-Channel |
| Power Dissipation | 38.5 W |
| Threshold Voltage | 5 V |
| Drain to Source Voltage (Vds) | 650 V |
| Breakdown Voltage (Drain to Source) | 650 V |
| Continuous Drain Current (Ids) | 7.00 A |
| Rise Time | 125 ns |
| Input Capacitance (Ciss) | 3095pF @25V(Vds) |
| Input Power (Max) | 38.5 W |
| Fall Time | 65 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 38.5W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.16 mm |
| Size-Width | 4.9 mm |
| Size-Height | 15.87 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDPF15N65 is a N-channel UniFET high voltage MOSFET based on planar stripe and DMOS technology. This MOSFET is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
● Low gate charge (48.5nC)
● Low Crss (23.6pF)
● 100% avalanche tested
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