| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-220-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.22 Ω |
| Polarity | N-Channel |
| Power Dissipation | 38.5 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 2.86 nF |
| Gate Charge | 60.0 nC |
| Drain to Source Voltage (Vds) | 500 V |
| Breakdown Voltage (Drain to Source) | 500 V |
| Breakdown Voltage (Gate to Source) | ±30.0 V |
| Continuous Drain Current (Ids) | 18.0 A |
| Rise Time | 165 ns |
| Input Capacitance (Ciss) | 2860pF @25V(Vds) |
| Input Power (Max) | 38.5 W |
| Fall Time | 90 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 38.5W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 10.16 mm |
| Size-Width | 4.7 mm |
| Size-Height | 9.19 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDPF18N50 is an UniFET™ high voltage MOSFET produced based on planar stripe and DMOS technology. It is tailored to reduce ON-state resistance and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
● 100% Avalanche tested
● 45nC Typical low gate charge
● 25pF Typical low Crss
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