| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 150 V |
| Current Rating | 4.10 A |
| Case/Package | SOIC-8 |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.057 Ω |
| Polarity | N-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 4 V |
| Input Capacitance | 1.29 nF |
| Gate Charge | 19.0 nC |
| Drain to Source Voltage (Vds) | 150 V |
| Breakdown Voltage (Drain to Source) | 150 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 4.10 A |
| Rise Time | 19 ns |
| Input Capacitance (Ciss) | 1290pF @25V(Vds) |
| Input Power (Max) | 2.5 W |
| Fall Time | 26 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDS2582 is a P-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is suitable for DC-to-DC converters, off-line UPS and high voltage synchronous rectifier applications.
● Low miller charge
● Low Qrr body diode
● Optimized efficiency at high frequencies
● UIS Capability (single pulse and repetitive pulse) formerly developmental type 82855
Fairchild
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Fairchild
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