TYPE | DESCRIPTION |
---|
Mounting Style | Surface Mount |
Number of Pins | 8 Pin |
Voltage Rating (DC) | 200 V |
Current Rating | 3.90 A |
Case/Package | SOIC-8 |
Number of Positions | 8 Position |
Drain to Source Resistance (on) (Rds) | 0.059 Ω |
Polarity | N-Channel |
Power Dissipation | 2.5 W |
Threshold Voltage | 2.9 V |
Input Capacitance | 2.54 nF |
Gate Charge | 46.0 nC |
Drain to Source Voltage (Vds) | 200 V |
Breakdown Voltage (Drain to Source) | 200 V |
Breakdown Voltage (Gate to Source) | ±20.0 V |
Continuous Drain Current (Ids) | 3.90 A |
Rise Time | 10 ns |
Input Capacitance (Ciss) | 2535pF @100V(Vds) |
Input Power (Max) | 1 W |
Fall Time | 10 ns |
Operating Temperature (Max) | 150 ℃ |
Operating Temperature (Min) | -55 ℃ |
Power Dissipation (Max) | 2.5W (Ta) |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Tape & Reel (TR) |
Size-Length | 5 mm |
Size-Width | 4 mm |
Size-Height | 1.5 mm |
Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDS2672 is a single N-channel MOSFET produced using Fairchild Semiconductor"s advanced UItraFET Trench® process. It has been especially tailored to minimize the ON-state resistance and yet maintain superior switching performance.
● Fast switching speed
● High performance Trench technology for extremely low RDS (ON)
Fairchild
11 Pages / 0.15 MByte
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8 Pages / 0.45 MByte
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27 Pages / 1.02 MByte
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1 Pages / 0.14 MByte
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