| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0077 Ω |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 1.9 V |
| Drain to Source Voltage (Vds) | 30 V |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 2890pF @15V(Vds) |
| Input Power (Max) | 1 W |
| Fall Time | 92 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2500 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ |
The FDS6679AZ is a P-channel MOSFET produced using Fairchild Semiconductor"s advanced PowerTrench® process. It has been especially tailored to minimize the ON-state resistance. This device is well suited for load switching applications common in portable battery packs.
● High performance Trench technology for extremely low RDS (ON)
● High power and current handing capability
● 6kV Typical HBM ESD protection level
ON Semiconductor
6 Pages / 0.46 MByte
ON Semiconductor
8 Pages / 0.52 MByte
Fairchild
Trans MOSFET P-CH 30V 13A 8Pin SOIC N T/R
ON Semiconductor
MOSFET P-CH 30V 13A 8SOIC
ON Semiconductor
Trans MOSFET P-CH 30V 13A 8Pin SOIC N T/R
Fairchild
Trans MOSFET P-CH 30V 13A 8Pin SOIC N T/R
Fairchild
Trans MOSFET P-CH 30V 13A 8Pin SOIC N T/R
ON Semiconductor
MOSFET P-CH 30V 13A 8SOIC
Fairchild
Trans MOSFET P-CH 30V 13A 8Pin SOIC N T/R
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