TYPE | DESCRIPTION |
---|
Mounting Style | Through Hole |
Number of Pins | 2 Pin |
Case/Package | TO-247-2 |
Forward Voltage | 3.2 V |
Thermal Resistance | 1.2℃/W (RθJC) |
Reverse recovery time | 85 ns |
Forward Current | 30000 mA |
Max Forward Surge Current (Ifsm) | 300 A |
Maximum Forward Voltage (Max) | 3.2 V |
Forward Current (Max) | 30 A |
Operating Temperature (Max) | 175 ℃ |
Operating Temperature (Min) | -65 ℃ |
Power Dissipation (Max) | 125000 mW |
TYPE | DESCRIPTION |
---|
Product Lifecycle Status | Active |
Packaging | Rail, Tube |
Size-Length | 15.8 mm |
Size-Width | 4.82 mm |
Size-Height | 20.8 mm |
The RHRG30120 is a Hyperfast Diode with soft recovery characteristics. It has the half recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial planar construction. This device is intended to be used as freewheeling/clamping diodes and diodes in a variety of switching power supplies and other power switching applications. Their low stored charge and hyperfast soft recovery minimize ringing and electrical noise in many power switching circuits reducing power loss in the switching transistors.
● High reliability
● Avalanche energy rated
● 1200VDC Blocking voltage
● 125W Maximum power dissipation
● 1.2°C/W Junction to case thermal resistance
ON Semiconductor
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