| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0082 Ω |
| Power Dissipation | 1.47 W |
| Threshold Voltage | 1.2 V |
| Drain to Source Voltage (Vds) | 30 V |
| Rise Time | 32 ns |
| Input Capacitance (Ciss) | 1210pF @15V(Vds) |
| Input Power (Max) | 1.47 W |
| Fall Time | 13 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1.47 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.575 mm |
The FDS6692A is a N-channel MOSFET produced using PowerTrench® process. It is designed specifically to improve the overall efficiency of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON) and fast switching speed.
● High performance Trench technology for extremely low RDS (ON)
● Low gate charge
● High power and current handling capability
ON Semiconductor
7 Pages / 0.38 MByte
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