| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.013 Ω |
| Power Dissipation | 1.6 W |
| Threshold Voltage | 1.8 V |
| Drain to Source Voltage (Vds) | 30 V |
| Rise Time | 5 ns |
| Input Capacitance (Ciss) | 1130pF @15V(Vds) |
| Input Power (Max) | 900 mW |
| Fall Time | 7 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1600 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
●Features
●---
● |
● 7.5A, 30V
● RDS(ON) = 13 mΩ @ VGS = 10V
● RDS(ON) = 17 mΩ @ VGS = 4.5V
● Fast switching speed
● Low gate charge
● High performance trench technology for extremely low RDS(ON)
● High power and current handling capability
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