| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Channels | 2 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.017 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 1.7 V |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 7.50 mA |
| Input Capacitance (Ciss) | 550pF @15V(Vds) |
| Input Power (Max) | 900 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 1600 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDS6990AS is a dual N-channel MOSFET designed to replace a dual MOSFET and two Schottky diodes in synchronous DC-to-DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS (ON) and low gate charge. Each MOSFET includes integrated Schottky diodes using Fairchild"s monolithic SyncFET technology. The performance of the transistor as the low-side switch in a synchronous rectifier is similar to the performance of the FDS6990A in parallel with a Schottky diode.
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● ±20V Gate to source voltage
● 7.5A Continuous drain current
● 20A Pulsed drain current
Fairchild
8 Pages / 0.69 MByte
Fairchild
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