| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 3.50 A |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.09 Ω |
| Polarity | Dual N-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 1.8 V |
| Input Capacitance | 220 pF |
| Gate Charge | 2.10 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 3.50 A |
| Rise Time | 11 ns |
| Input Capacitance (Ciss) | 220pF @15V(Vds) |
| Input Power (Max) | 900 mW |
| Fall Time | 3 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
General Description
●These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor"s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching
●performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required.
●Features
●3.5 A, 30 V. RDS(ON) = 0.090 W @ VGS = 10 V
● RDS(ON) = 0.140 W @ VGS = 4.5 V.
●Fast switching speed.
●Low gate charge (2.1nC typical).
●High performance trench technology for extremely low RDS(ON).
●High power and current handling capability.
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