| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | 30.0 V |
| Current Rating | 8.60 A |
| Case/Package | SOIC-8 |
| Drain to Source Resistance (on) (Rds) | 15 mΩ |
| Polarity | N-Channel, Dual N-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 2.2 V |
| Input Capacitance | 2.09 nF |
| Gate Charge | 18.5 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 8.60 A, 6.30 A |
| Rise Time | 11.0 ns |
| Input Capacitance (Ciss) | 760pF @10V(Vds) |
| Input Power (Max) | 900 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Obsolete |
| Packaging | Cut Tape (CT) |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.75 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
General Description
●This part is designed to replace two single SO-8 MOSFETs in synchronous DC:DC power supplies that provide the various peripheral voltage rails required in notebook computers and other battery powered electronic devices. FDS6982 contains two unique 30V, N-channel, logic level, PowerTrench™ MOSFETs designed to maximize power conversion efficiency.
●Features
●• Q2: 8.6A, 30V. RDS(on) = 0.015 Ω @ VGS = 10V
● RDS(on) = 0.020 Ω @ VGS = 4.5V
●• Q1: 6.3A, 30V. RDS(on) = 0.028 Ω @ VGS = 10V
● RDS(on) = 0.035 Ω @ VGS = 4.5V
●• Fast switching speed.
●• Low gate charge (Q1 typical = 8.5nC).
●• High performance trench technology for extremely low RDS(ON).
Fairchild
9 Pages / 0.13 MByte
Fairchild
1 Pages / 0.14 MByte
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