| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -20.0 V |
| Current Rating | -5.00 A |
| Case/Package | SOIC-8 |
| Number of Channels | 1 Channel |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 47 mΩ |
| Polarity | P-Channel |
| Power Dissipation | 2.5 W |
| Threshold Voltage | 600 mV |
| Input Capacitance | 1.13 nF |
| Gate Charge | 20.0 nC |
| Drain to Source Voltage (Vds) | 20 V |
| Breakdown Voltage (Drain to Source) | 20 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | 5.00 mA |
| Rise Time | 23 ns |
| Input Capacitance (Ciss) | 1130pF @10V(Vds) |
| Input Power (Max) | 1 W |
| Fall Time | 90 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2.5W (Ta) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDS8433A is a single P-channel enhancement-mode Power FET produced using Fairchild"s proprietary high cell density DMOS technology. This very high density process especially tailored to minimize ON-state resistance and provide superior switching performance. It is suitable for load switch, DC-to-DC converter and battery protection applications.
● Fast switching speed
● High density cell design for extremely low RDS (ON)
● High power and current handling capability
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