| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.0037 Ω |
| Power Dissipation | 5 W |
| Threshold Voltage | 3.1 V |
| Drain to Source Voltage (Vds) | 60 V |
| Rise Time | 15 ns |
| Input Capacitance (Ciss) | 4820pF @30V(Vds) |
| Fall Time | 7.1 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 5 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 4.9 mm |
| Size-Width | 3.9 mm |
| Size-Height | 1.575 mm |
The FDS86540 is a N-channel MOSFET produced using Fairchild Semiconductor"s PowerTrench® process. It is designed specifically to improve the overall efficiency and to minimize switch node ringing of DC-to-DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS (ON), fast switching speed and body diode reverse recovery performance. It is suitable for synchronous rectifier and load switch applications.
● High performance Trench technology for extremely low RDS (ON)
● High power and current handing capability in a widely used surface-mount package
● 100% UIL tested
ON Semiconductor
6 Pages / 0.25 MByte
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