| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Current Rating | 5.50 A |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.025 Ω |
| Polarity | N-Channel, P-Channel |
| Power Dissipation | 2 W |
| Threshold Voltage | 670 mV |
| Input Capacitance | 1.13 nF |
| Gate Charge | 20.0 nC |
| Drain to Source Voltage (Vds) | 30V, 20V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±8.00 V |
| Continuous Drain Current (Ids) | 5.50 A |
| Rise Time | 23.0 ns |
| Input Capacitance (Ciss) | 900pF @10V(Vds) |
| Input Power (Max) | 900 mW |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDS8928A is a dual N/P-channel enhancement-mode MOSFET with high cell density and DMOS technology. This very high density process is especially tailored to minimize ON-state resistance and provide superior switching performance. The device is particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where switching, low in-line power loss fast and resistance to transients are needed.
● High density cell design for extremely low RDS (ON)
● High power and current handling capability in a widely used surface-mount package
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