| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 8 Pin |
| Voltage Rating (DC) | -30.0 V |
| Current Rating | -2.90 A |
| Case/Package | SOIC-8 |
| Number of Positions | 8 Position |
| Drain to Source Resistance (on) (Rds) | 0.095 Ω |
| Polarity | P-Channel |
| Power Dissipation | 2 W |
| Input Capacitance | 185 pF |
| Gate Charge | 2.50 nC |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Gate to Source) | ±25.0 V |
| Continuous Drain Current (Ids) | 2.90 mA |
| Rise Time | 13 ns |
| Input Capacitance (Ciss) | 185pF @15V(Vds) |
| Input Power (Max) | 900 mW |
| Fall Time | 2 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 2000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 5 mm |
| Size-Width | 4 mm |
| Size-Height | 1.5 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The FDS9953A is a PowerTrench® dual P-channel MOSFET rugged gate version of advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage ratings (4.5V to 20V). It is suitable for load-switch and battery protection applications.
● Fast switching speed
● Low gate charge
● High performance Trench technology for extremely low RDS (ON)
● High power and current handling capability
● ±25V Gate to source voltage
● ±2.9A Continuous drain current
● ±10A Pulsed drain current
Fairchild
6 Pages / 0.07 MByte
Fairchild
8 Pages / 0.18 MByte
Fairchild
11 Pages / 0.27 MByte
Fairchild
Trans MOSFET P-CH 30V 2.9A 8Pin SOIC N T/R
ON Semiconductor
Trans MOSFET P-CH 30V 2.9A 8Pin SOIC N T/R
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