| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 36.0 A |
| Case/Package | TO-247-3 |
| Number of Positions | 3 Position |
| Drain to Source Resistance (on) (Rds) | 0.19 Ω |
| Polarity | N-Channel |
| Power Dissipation | 650 W |
| Threshold Voltage | 5 V |
| Input Capacitance | 5.80 nF |
| Gate Charge | 102 nC |
| Drain to Source Voltage (Vds) | 600 V |
| Breakdown Voltage (Drain to Source) | 600 V |
| Continuous Drain Current (Ids) | 36.0 A |
| Rise Time | 25 ns |
| Reverse recovery time | 200 ns |
| Input Capacitance (Ciss) | 5800pF @25V(Vds) |
| Fall Time | 22 ns |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 650W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tube |
| Size-Length | 16.26 mm |
| Size-Width | 5.3 mm |
| Size-Height | 21.46 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
The IXFH36N60P is a PolarHV™ HiPerFET N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
● Unclamped inductive switching (UIS) rated
● International standard package
● Low package inductance
● Easy to mount
● Space savings
● High power density
IXYS Semiconductor
4 Pages / 0.26 MByte
IXYS Semiconductor
4 Pages / 0.26 MByte
IXYS Semiconductor
IXYS SEMICONDUCTOR IXFH36N60P Power MOSFET, N Channel, 36A, 600V, 190mohm, 10V, 5V
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