| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Case/Package | TO-251-3 |
| Drain to Source Resistance (on) (Rds) | 10.0 mΩ |
| Polarity | N-Channel |
| Power Dissipation | 3.3W (Ta), 56W (Tc) |
| Drain to Source Voltage (Vds) | 30 V |
| Breakdown Voltage (Drain to Source) | 30.0 V |
| Breakdown Voltage (Gate to Source) | ±20.0 V |
| Continuous Drain Current (Ids) | 46.0 A |
| Input Capacitance (Ciss) | 1230pF @15V(Vds) |
| Input Power (Max) | 1.5 W |
| Power Dissipation (Max) | 3.3W (Ta), 56W (Tc) |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tube |
| Operating Temperature | -55℃ ~ 175℃ (TJ) |
General Description
●This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON)in a small package.
●Features
●• 56 A, 30 V RDS(ON)= 9.5 mΩ@ VGS= 10 V
● RDS(ON)= 13 mΩ@ VGS= 4.5 V
●• Low gate charge (23nC typ.)
●• Fast Switching
●• High performance trench technology for extremely low RDS(ON)
Fairchild
6 Pages / 0.11 MByte
Fairchild
45 Pages / 1.11 MByte
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