FDT434 Datasheet PDF - Fairchild

General Description

●This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.

●Features

●• –5.5 A, –20 V. RDS(ON) = 0.050 Ω @ VGS = –4.5 V

●                     RDS(ON) = 0.070 Ω @ VGS = –2.5 V.

●• Low gate charge (13nC typical)

●• High performance trench technology for extremely low RDS(ON).

●• High power and current handling capability in a widely used surface mount package.

●Applications

●• Low Dropout Regulator

●• DC/DC converter

●• Load switch

●• Motor driving