FDV304 Datasheet PDF - Fairchild

General Description  

●ThisP-Channel  enhancement mode  field effect transistors is produced using Fairchild"s proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize on-state resistance at low gate drive conditions.  Thisdevice is designed especially for application in battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts.

●Features

●-25 V, -0.46 A continuous, -1.5A Peak.

●   RDS(ON)= 1.1 W@ VGS= -4.5V

●   RDS(ON)= 1.5 W@ VGS= -2.7 V.

●Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5V.

●Gate-Source Zener for ESD ruggedness. >6kV Human Body Model

●Compact industry standard SOT-23 surface mount package.