Silicon Carbide (SiC) Schottky Diodes use a completely new technology that provides superior switching performance and higher reliability to silicon. No reverse recovery current, temperature independent switching characteristics, and excellent thermal performance sets Silicon Carbide as the next generation of power semiconductor. System benefits include highest efficiency, faster operating frequency, increased power density, reduced EMI, and reduced system size and cost.
●Features
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● Max Junction Temperature 175 °C
● Avalanche Rated 80 mJ
● High Surge Current Capacity
● Positive Temperature Coefficient
● No Reverse Recovery / No Forward Recovery
ON Semiconductor
5 Pages / 0.41 MByte
ON Semiconductor
2 Pages / 0.05 MByte
ON Semiconductor
Diode Schottky 1.2kV 15A Tube
ON Semiconductor
SiC Diode, 1200V, 15A, TO-247-2
ON Semiconductor
SiC Diode, 1200V, 15A, TO-247-3, Common Cathode
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