| TYPE | DESCRIPTION |
|---|
| Mounting Style | Through Hole |
| Number of Pins | 3 Pin |
| Voltage Rating (DC) | 600 V |
| Current Rating | 6.80 A |
| Case/Package | TO-220-3 |
| Polarity | N-Channel |
| Power Dissipation | 25 W |
| Part Family | IRG4IBC10UD |
| Rise Time | 16 ns |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 28 ns |
| Input Power (Max) | 25 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Rail, Tube |
| Size-Length | 10.75 mm |
| Size-Height | 16.13 mm |
| Operating Temperature | -55℃ ~ 150℃ |
●Co-Pack IGBT up to 20A, Infineon
●Isolated Gate Bipolar Transistors (IGBT) from Infineon provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.
International Rectifier
10 Pages / 0.29 MByte
International Rectifier
11 Pages / 0.29 MByte
Infineon
Trans IGBT Chip N-CH 600V 6.8A 25000mW 3Pin(3+Tab) TO-220 Full-Pak Tube
International Rectifier
Trans IGBT Chip N-CH 600V 6.8A 25000mW 3Pin(3+Tab) TO-220 Full-Pak Tube
Infineon
Trans IGBT Chip N-CH 600V 6.8A 3Pin (3+Tab) TO-220 Full-Pak
International Rectifier
IGBT W/DIODE 600V 6.8A TO-220FP
IRF
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
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