| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-263-2 |
| Power Dissipation | 208000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 34 ns |
| Input Power (Max) | 208 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 208000 mW |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Packaging | Tape & Reel (TR) |
| Size-Length | 10.67 mm |
| Size-Width | 9.65 mm |
| Size-Height | 4.83 mm |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Using novel field stop IGBT technology, Fairchild’s field stop IGBTs offer the optimum performance for solar inverter, UPS, welder and PFC applications where low conduction and switching losses are essential.
●Features
●---
● |
● High current capability
● Low saturation voltage: VCE(sat) =2.2V @ IC = 20A
● High input impedance
● Fast switching: EOFF =8uJ/A
● RoHS compliant
ON Semiconductor
9 Pages / 0.74 MByte
ON Semiconductor
22 Pages / 2.39 MByte
ON Semiconductor
2 Pages / 0.05 MByte
Fairchild
FAIRCHILD SEMICONDUCTOR FGB20N60SF IGBT Single Transistor, General Purpose, 20A, 600V, 208W, 600V, TO-263, 3Pins
Fairchild
Trans IGBT Chip N-CH 600V 40A 3Pin(2+Tab) TO-263AB T/R
ON Semiconductor
Trans IGBT Chip N-CH 600V 40A 208000mW 3Pin(2+Tab) D2PAK T/R
ON Semiconductor
Trans IGBT Chip N-CH 600V 40A 208000mW 3Pin(2+Tab) D2PAK T/R
ON Semiconductor
Trans IGBT Chip N-CH 600V 40A 208000mW Automotive 3Pin(2+Tab) D2PAK T/R
Fairchild
Trans IGBT Chip N-CH 600V 40A 3Pin D2PAK T/R
Fairchild
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-263AB, ROHS COMPLIANT, D2PAK-3/2
Part Datasheet PDF Search
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.
