| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Number of Pins | 3 Pin |
| Case/Package | TO-252-3 |
| Power Dissipation | 40000 mW |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 234 ns |
| Input Power (Max) | 40 W |
| Operating Temperature (Max) | 150 ℃ |
| Operating Temperature (Min) | -55 ℃ |
| Power Dissipation (Max) | 40 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Unknown |
| Packaging | Tape & Reel (TR) |
| Size-Length | 6.73 mm |
| Size-Width | 6.22 mm |
| Size-Height | 2.39 mm |
Fairchild"s Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature.
●Features
●---
● |
● High Current Capability
● Very Low Saturation Voltage : VCE(sat) = 1.2 V at IC = 3 A
● High Input Impedance
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