| TYPE | DESCRIPTION |
|---|
| Mounting Style | Surface Mount |
| Case/Package | TO-252-3 |
| Breakdown Voltage (Collector to Emitter) | 600 V |
| Reverse recovery time | 234 ns |
| Input Power (Max) | 40 W |
| TYPE | DESCRIPTION |
|---|
| Product Lifecycle Status | Active |
| Operating Temperature | -55℃ ~ 150℃ (TJ) |
Fairchild"s Insulated Gate Bipolar Transistors (IGBTs) provide very low conduction losses. The device is designed for applications where very low On-Voltage Drop is a required feature.
●Features
●---
● |
● High Current Capability
● Very Low Saturation Voltage : VCE(sat) = 1.2 V at IC = 3 A
● High Input Impedance
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